Silicone polymer insulation film on semiconductor substrate and method for forming the film

A method for forming a silicone polymer insulation film on a semiconductor substrate by plasma treatment, comprising the steps of:

• introducing a material gas with no additive gas into a reaction chamber for plasma CVD processing wherein a semiconductor substrate is placed, said material gas comprising a silicon-containing hydrocarbon having two alkoxy groups or less or having no alkoxy group;
• and
• forming a silicone polymer fin having —SR2O— repeating structural units on the semiconductor substrate by activating a plasma polymerization reaction in the reaction chamber where the material gas is present, while controlling the flow of the material gas to lengthen a residence time, Rt, of the material gas in the reaction chamber until the relative dielectric constant of the silicone polymer film is lower than a predetermined value, wherein 100 msec ≦Rt,
• Rt[s]=9.42×107(Pr·Ts/Ps·Tr)rw2d/F
• wherein:
• Pr:
• reaction chamber pressure (Pa)
• Ps:
• standard atmospheric pressure (Pa)
• Tr:
• average temperature of the reaction gas (K)
• Ts:
• standard temperature (K)
• rw:
• radius of the silicon substrate (m)
• d:
• space between the silicon substrate and the upper electrode (m)
• F:
• total flow volume rate of the reaction gas (sccm).