Y10S 257/912
Charge transfer device using both electron and hole signal carriers
Y10S257/912 (Charge transfer device using both electron and hole signal carriers) appears on 28 US grants and 5 published applications in this corpus.
Search patents in Y10S- Granted patents
- 28
- Published applications
- 5
- Assignees
- 26
- Inventors
- 50
- Latest grant
- 21 Oct 2014
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 2 |
| 2003 | 1 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 1 | 0 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of detecting the circular uniformity of the semiconductor circular contact holes21 Oct 2014US 8,865,482 B2Shanghai Huali Microelectronics Corporation
- Method for fabricating storage node contact in semiconductor device4 May 2010US 7,709,367 B2Hynix Semiconductor Inc.
- Solid image capturing element for power saving at output section and manufacturing method for the same7 Jul 2009US 7,557,390 B2Sanyo Electric Co., Ltd.
- Field effect transistor and image display apparatus using the same9 Nov 2004US 6,815,719 B2Hitachi, Ltd.
- Heterojunction bipolar transferred electron tetrode20 May 2003US 6,566,694 B2Sharp Kabushiki Kaisha
- Method of detecting the circular uniformity of the semiconductor circular contact holes8 May 2014US 2014/0127835 A1Shanghai Huali Microelectronics Corporation
- Method for fabricating storage node contact in semiconductor device3 Jan 2008US 2008/0003811 A1Hynix Semiconductor Inc.
- Solid image capturing element for power saving at output section and manufacturing method for the same24 Jun 2004US 2004/0119865 A1Sanyo Electric Co., Ltd.
- Field effect transistor and image display apparatus using the same29 Aug 2002US 2002/0117689 A1Hitachi, Ltd.
- Heterojunction bipolar transferred electron tetrode31 Jan 2002US 2002/0011605 A1Sharp Kabushiki Kaisha
Most cited
By later US patents
- Thin film semiconductor and process for producing the same201US 5,108,843 ARicoh Company, Ltd. · 1992
- Process of fabricating a semiconductor device involving densification and recrystallization of amorphous silicon75US 4,814,292 AOki Electric Industry Co., Ltd. · 1989
- Method of detecting the circular uniformity of the semiconductor circular contact holes38US 8,865,482 B2Shanghai Huali Microelectronics Corporation · 2014
- Ionic liquid-channel charge-coupled device30US 5,374,834 AMassachusetts Institute of Technology · 1994
- Method of forming isolated regions of oxide20US 5,192,707 ASGS-Thomson Microelectronics S.A. · 1993