Y10S 257/90
Mosfet type gate sidewall insulating spacer
Official title: MOSFET type gate sidewall insulating spacer
Y10S257/90 (Mosfet type gate sidewall insulating spacer) appears on 785 US grants and 266 published applications in this corpus.
Search patents in Y10S- Granted patents
- 785
- Published applications
- 266
- Assignees
- 134
- Inventors
- 883
- Latest grant
- 11 Feb 2020
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 10 | 0 |
| 1988 | 16 | 0 |
| 1989 | 23 | 0 |
| 1990 | 30 | 0 |
| 1991 | 15 | 0 |
| 1992 | 24 | 0 |
| 1993 | 21 | 0 |
| 1994 | 26 | 0 |
| 1995 | 32 | 0 |
| 1996 | 37 | 0 |
| 1997 | 31 | 0 |
| 1998 | 47 | 0 |
| 1999 | 49 | 0 |
| 2000 | 56 | 0 |
| 2001 | 46 | 15 |
| 2002 | 33 | 31 |
| 2003 | 35 | 28 |
| 2004 | 39 | 37 |
| 2005 | 26 | 26 |
| 2006 | 34 | 24 |
| 2007 | 26 | 24 |
| 2008 | 20 | 19 |
| 2009 | 21 | 19 |
| 2010 | 28 | 17 |
| 2011 | 17 | 4 |
| 2012 | 11 | 4 |
| 2013 | 3 | 2 |
| 2014 | 6 | 7 |
| 2015 | 4 | 3 |
| 2016 | 3 | 3 |
| 2017 | 3 | 2 |
| 2018 | 2 | 1 |
| 2019 | 0 | 0 |
| 2020 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage MISFET11 Feb 2020US 10,559,500 B2Renesas Electronics Corporation
- Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage MISFET29 May 2018US 9,984,934 B2Renesas Electronics Corporation
- Semiconductor device and fabrication method thereof9 Jan 2018US 9,865,734 B2Socionext Inc.
- Electronic device with asymmetric gate strain3 Oct 2017US 9,780,184 B2Micron Technology, Inc.
- Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage MISFET2 May 2017US 9,640,440 B2Renesas Electronics Corporation
- Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage misfet16 Aug 2018US 2018/0233414 A1Renesas Electronics Corporation
- Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage misfet20 Jul 2017US 2017/0207128 A1Renesas Electronics Corporation
- Semiconductor device and fabrication method thereof27 Apr 2017US 2017/0117412 A1Socionext Inc.
- Semiconductor device and fabrication method thereof20 Oct 2016US 2016/0308053 A1Socionext Inc.
- Electronic device with asymmetric gate strain15 Sep 2016US 2016/0268428 A1Micron Technology, Inc.
Most cited
By later US patents
- Semiconductor device and method for manufacturing the same536US 6,503,826 B1NEC Corporation · 2003
- Process for fabricating self-aligned contact studs for semiconductor structures321US 5,166,096 AInternational Business Machines Corporation · 1992
- Semiconductor device with oxide layer293US 5,289,030 ASemiconductor Energy Laboratory Co.Ltd. · 1994
- Semiconductor device including active matrix circuit284US 5,712,495 ASemiconductor Energy Laboratory Co.Ltd. · 1998
- Method for fabricating an array of ultra-small pores for chalcogenide memory cells281US 5,879,955 AMicron Technology, Inc. · 1999