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US 2016/0268428 A1Published application
Electronic device with asymmetric gate strain
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Kunal R. Parekh
Life of this patent
Estimating the term…
Abstract
The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced source drain junction leakage. The gate electrode strain can be obtained through non symmetric placement of stress inducing structures as part of the gate electrode.
Claims22
-15. (canceled)
An electronic device, comprising:
- a source region and a drain region of a transistor formed in a substrate, the source region and the drain region separated by a channel region between the source region and drain region;
- a gate dielectric over the channel region;
- a gate electrode disposed over the gate dielectric, the gate electrode configured with a step extending between a thinner side of the gate electrode and a thicker side of the gate electrode;
- a material on at least a portion of the thinner side of the gate electrode and extending to contact the step to the thicker side of the gate electrode;
- and
- a first gate spacer contacting a first side of the gate electrode and a second gate spacer contacting a second side of the gate electrode, with the gate electrode configured such that a stress condition in the substrate at the thicker side of the gate electrode is different from a stress condition in the substrate at the thinner side of the gate electrode.
3 more elements
A method of forming a transistor, the method comprising:
- forming a gate electrode over a gate oxide over a substrate;
- forming first and second dielectric spacers on first and second sides of the gate electrode;
- forming an additional dielectric spacer on the first side of the gate electrode;
- and
- forming source and drain regions relative to the two dielectric spacers.
2 more elements
A method of forming a transistor, the method comprising:
- forming a gate electrode over a gate oxide on a substrate;
- removing a portion of the gate electrode to form an electrode with a different height on a first side than on a second side;
- and
- forming source and drain regions in the substrate on opposite sides of the gate electrode.
1 more element
A method of forming a transistor, the method comprising:
- forming a gate electrode over a gate dielectric on a substrate;
- and
- forming sidewall spacers on first and second sides of the gate electrode;
- and
- wherein at least one of the gate electrode and the spacers on the first and second sides are constructed to induce an asymmetrical strain into the transistor between a first region proximate the first side of the gate electrode and a second region proximate the second side of the gate electrode.
2 more elements
Dependencies are inferred from the claim text.