Process for fabricating self-aligned contact studs for semiconductor structures

A process for fabricating a stud for a semiconductor structure, comprising:

• providing a semiconductor substrate having an alignment structure and said semiconductor structure formed thereon, said alignment structure including a sidewall;
• forming a sidewall spacer contiguous with said semiconductor structure and said sidewall of said alignment structure, said sidewall spacer being of substantially the same height as said alignment structure;
• depositing an insulating layer contiguous with said sidewall spacer so as to effectively insulate said semiconductor structure, said insulating layer being of substantially the same height as said sidewall spacer;
• etching said sidewall spacer selectively to said sidewall of said alignment structure, said semiconductor structure and said insulating layer, for forming a contact window opening for allowing access to said semiconductor structure;
• and
• backfilling said contact window opening with a conductive material so as to contact said semiconductor structure for forming said stud.