Y10S 257/921
Radiation hardened semiconductor device
Y10S257/921 (Radiation hardened semiconductor device) appears on 51 US grants and 12 published applications in this corpus.
Search patents in Y10S- Granted patents
- 51
- Published applications
- 12
- Assignees
- 33
- Inventors
- 81
- Latest grant
- 16 Nov 2010
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 7 | 0 |
| 1996 | 3 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 1 |
| 2002 | 1 | 0 |
| 2003 | 2 | 2 |
| 2004 | 3 | 1 |
| 2005 | 2 | 1 |
| 2006 | 2 | 5 |
| 2007 | 2 | 2 |
| 2008 | 0 | 0 |
| 2009 | 1 | 0 |
| 2010 | 4 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method and apparatus for increasing the immunity of new generation microprocessors from ESD events16 Nov 2010US 7,833,838 B2Intel Corporation
- Total ionizing dose suppression transistor architecture15 Jun 2010US 7,737,535 B2Aeroflex Colorado Springs Inc.
- Multi-layered structure forming method, method of manufacturing wiring substrate, and method of manufacturing electronic apparatus25 May 2010US 7,723,243 B2Seiko Epson Corporation
- Total ionizing dose radiation hardening using reverse body bias techniques19 Jan 2010US 7,649,216 B1Arizona Board of Regents for and on behalf of Arizona State University
- Total ionizing dose suppression transistor architecture14 Apr 2009US 7,518,218 B2Aeroflex Colorado Springs Inc.
- Total ionizing dose suppression transistor architecture9 Aug 2007US 2007/0181978 A1Aeroflex Colorado Springs Inc.
- Multi-layered structure forming method, method of manufacturing wiring substrate, and method of manufacturing electronic apparatus21 Jun 2007US 2007/0141828 A1Seiko Epson Corporation
- Total ionizing dose suppression transistor architecture7 Sep 2006US 2006/0197108 A1Aeroflex Colorado Springs Inc.
- Method and apparatus for increasing the immunity of new generation microprocessors from ESD events17 Aug 2006US 2006/0180901 A1Intel Corporation
- Radiation hardened bipolar junction transistor20 Jul 2006US 2006/0157736 A1Intersil Americas Inc.
Most cited
By later US patents
- Semiconductor device having semiconductor elements formed in a retrograde well structure128US 5,726,488 AHitachi, Ltd. · 1998
- Method of fabricating an electro-optic integrated circuit having light emitting diodes110US 5,612,231 AMotorola, Inc. · 1997
- Radiation shielding for integrated circuit devices using reconstructed plastic packages90US 5,406,117 A1995
- Radiation shielding of plastic integrated circuits53US 5,889,316 ASpace Electronics, Inc. · 1999
- Radiation shielding of plastic integrated circuits50US 5,825,042 ASpace Electronics, Inc. · 1998