Total ionizing dose radiation hardening using reverse body bias techniques

A radiation hardened integrated circuit (IC) comprising:

• a ground node;
• a first voltage node configured to receive a first voltage between the first voltage node and ground;
• a second voltage node configured to receive a second voltage between the second voltage node and ground, such that a magnitude of the second voltage is between a magnitude of the first voltage and a magnitude of ground;
• interface circuitry coupled between and configured to receive operating power from the first voltage node and the ground node;
• and
• core circuitry:
• coupled between and configured to receive operating power from the first voltage node and the second voltage node;
• and
• comprising a plurality of N-type metal-oxide-semiconductor (NMOS) transistors having a plurality of sources connected to the second voltage node and a plurality of bodies connected to the ground node,
• wherein applying the second voltage to the plurality of sources and applying ground to the plurality of bodies provides reverse body biasing (RBB) to the plurality of NMOS transistors.