Y10S 257/907
Folded bit line dram configuration
Y10S257/907 (Folded bit line dram configuration) appears on 141 US grants and 77 published applications in this corpus.
Search patents in Y10S- Granted patents
- 141
- Published applications
- 77
- Assignees
- 37
- Inventors
- 135
- Latest grant
- 22 Aug 2017
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 4 | 0 |
| 1996 | 2 | 0 |
| 1997 | 5 | 0 |
| 1998 | 4 | 0 |
| 1999 | 6 | 0 |
| 2000 | 10 | 0 |
| 2001 | 15 | 5 |
| 2002 | 15 | 14 |
| 2003 | 15 | 10 |
| 2004 | 7 | 12 |
| 2005 | 19 | 9 |
| 2006 | 4 | 8 |
| 2007 | 11 | 4 |
| 2008 | 6 | 8 |
| 2009 | 6 | 2 |
| 2010 | 3 | 3 |
| 2011 | 2 | 0 |
| 2012 | 2 | 1 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 1 |
| 2016 | 0 | 0 |
| 2017 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of forming semiconductor device including protrusion type isolation layer22 Aug 2017US 9,741,611 B2Samsung Electronics Co., Ltd.
- Semiconductor device including protrusion type isolation layer14 Feb 2012US 8,115,246 B2Samsung Electronics Co., Ltd.
- Non-volatile semiconductor memory device10 Jan 2012US 8,093,645 B2Panasonic Corporation
- Semiconductor integrated circuit devices having contacts formed of single-crystal materials8 Nov 2011US 8,053,831 B2Samsung Electronics Co., Ltd.
- Cell structure of semiconductor device having an active region with a concave portion4 Oct 2011US 8,030,697 B2Samsung Electronics Co., Ltd.
- Method of forming semiconductor device including protrusion type isolation layer19 Nov 2015US 2015/0333151 A1Samsung Electronics Co., Ltd.
- Semiconductor device including protrusion type isolation layer17 May 2012US 2012/0119290 A1Samsung Electronics Co., Ltd.
- Semiconductor device including protrusion type isolation layer14 Oct 2010US 2010/0258860 A1Samsung Electronics Co., Ltd.
- Non-volatile semiconductor memory device16 Sep 2010US 2010/0230742 A1Panasonic Corporation
- Cell region layout of semiconductor device and method of forming contact pad using the same21 Jan 2010US 2010/0015767 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Semiconductor device353US 6,969,662 B22005
- Semiconductor device257US 7,541,616 B2Innovative Silicon ISi SA · 2009
- Semiconductor device238US 6,925,006 B2Innovative Silicon S.A. · 2005
- Fault-tolerant hierarchical bus system and method of operating same138US 5,666,480 AMonolithic System Technology, Inc. · 1997
- Semiconductor memory133US 5,332,923 ANEC Corporation · 1994