Wiring structure of semiconductor device and method for manufacturing the same

A wiring structure of a semiconductor device comprising:

• a semiconductor substrate;
• an insulating layer formed on said semiconductor substrate and including an aperture formed therein;
• and
• a diffusion barrier film which has a smooth and eroded surface and no grain boundary at a surface thereof so as to uniformly nucleate a metal layer, said diffusion barrier film being formed through a plasma irradiation on both sidewalls of said aperture;
• wherein said metal layer is buried in said aperture where said diffusion barrier film is formed.

A method for forming a wiring structure of a semiconductor device comprising the steps of:

• (a) forming an insulating layer on a semiconductor substrate;
• (b) forming an aperture on said insulating layer;
• (c) forming a diffusion barrier film on said insulating layer, on the substrate exposed by said aperture and on the inner sidewalls of said aperture;
• (d) etching by irradiating a surface of said diffusion barrier film with plasma, so as to smooth and erode the surface of said diffusion barrier film formed on the inner sidewalls of said aperture so that said smoothed and eroded surface of said diffusion barrier film has no grain boundaries;
• and
• (e) forming a metal layer on said plasma-irradiated diffusion barrier film and increasing the filling characteristics of said metal layer by providing a plasma treatment to said diffusion barrier film.

A method for forming a wiring structure of a semiconductor device comprising the steps of:

• (a) forming an insulating layer on a semiconductor substrate;
• (b) forming an aperture on said insulating layer;
• (c) forming a first diffusion barrier film on said insulating layer, on the substrate exposed by said aperture, and on the inner sidewalls of said aperture;
• (d) etching by irradiating a surface of said first diffusion barrier film with plasma, so as to smooth the surface of said first diffusion barrier film formed on the inner sidewalls of said aperture;
• (e) forming a second diffusion barrier film on said etched first diffusion barrier film;
• (f) forming a metal layer all over the substrate where said second diffusion barrier film is formed;
• and
• (g) burying said aperture by performing a heat treatment on said metal layer.

A method for forming a wire of a semiconductor device comprising the steps of:

• forming an insulating layer on a semiconductor substrate;
• forming an aperture on said insulating layer;
• forming a first diffusion barrier film on said insulating layer, on the substrate exposed by said aperture, and on the inner sidewalls of said aperture;
• etching by irradiating a surface of the first diffusion barrier film with plasma, so as to smooth the surface of the first diffusion barrier film formed on the inner sidewalls of said aperture;
• forming a second diffusion barrier film on said etched first diffusion barrier film;
• and
• performing a high temperature sputtering all over the substrate where said second diffusion barrier film is formed so as to bury said aperture.