Y10S 257/919
Elements of similar construction connected in series or parallel to average out
Official title: Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics
Y10S257/919 (Elements of similar construction connected in series or parallel to average out) appears on 31 US grants and 5 published applications in this corpus.
Search patents in Y10S- Granted patents
- 31
- Published applications
- 5
- Assignees
- 33
- Inventors
- 52
- Latest grant
- 18 Oct 2011
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 1 |
| 2004 | 1 | 3 |
| 2005 | 2 | 0 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor integrated circuit18 Oct 2011US 8,039,874 B2Renesas Electronics Corporation
- Semiconductor device and method for evaluating characteristics of the same9 May 2006US 7,042,007 B2Matsushita Electric Industrial Co., Ltd.
- Current reference apparatus and systems13 Dec 2005US 6,975,005 B2Intel Corporation
- Padless structure design for easy identification of bridging defects in lines by passive voltage contrast27 Sep 2005US 6,949,765 B2Chartered Semiconductor Manufacturing Ltd.
- Current reference apparatus17 Feb 2004US 6,693,332 B2Intel Corporation
- Semiconductor integrated circuit8 May 2008US 2008/0105929 A1NEC Electronics Corporation
- Semiconductor device and method for evaluating characteristics of the same28 Oct 2004US 2004/0212016 A1Matsushita Electric Industrial Co., Ltd.
- Padless structure design for easy identification of bridging defects in lines by passive voltage contrast6 May 2004US 2004/0084671 A1Chartered Semiconductor Manufacturing Ltd.
- Current reference apparatus and systems29 Apr 2004US 2004/0080362 A1Intel Corporation
- Current reference apparatus19 Jun 2003US 2003/0111698 A1Intel Corporation
Most cited
By later US patents
- Metal oxide semiconductor transistor and a method for manufacturing the same112US 5,548,143 ASamsung Electronics Co., Ltd. · 1996
- Padless structure design for easy identification of bridging defects in lines by passive voltage contrast85US 6,949,765 B2Chartered Semiconductor Manufacturing Ltd. · 2005
- N-channel MOS transistors having source/drain regions with germanium43US 4,928,156 AMotorola, Inc. · 1990
- Manufacturing method of insulated gate field effect transistor using reflowable sidewall spacers29US 4,755,479 AFujitsu Limited · 1988
- Method and means for passivation and isolation in semiconductor devices25US 4,017,887 AThe United States of America as represented by the Secretary of the Air Force · 1977