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US 8,039,874 B2Granted
Semiconductor integrated circuit
AssigneeRenesas Electronics Corporation
InventorsMasatomo Eimitsu, Takanori Saeki
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Abstract
According to an aspect of the present invention, there is provided a semiconductor IC that includes a plurality of standard cells arranged in a first direction on a semiconductor substrate, and a first diffusion layer connected to a first power source and a second diffusion layer connected to a second power source in the each standard cell, wherein the first diffusion layers as well as the second diffusion layers of neighboring standard cells are integrally formed.
Claims8
A semiconductor integrated circuit comprising:
- a plurality of standard cells arranged in a first direction on a semiconductor substrate, each cell being separated from neighboring standard cells by a cell boundary between the neighboring standard cells;
- and
- a first diffusion layer connected to a first power source and a second diffusion layer connected to a second power source in each of the plurality of standard cells,
- wherein the first diffusion layer as well as the second diffusion layer of all of the plurality of standard cells are integrally formed;
- wherein no isolation region is formed between neighboring standard cells at the cell boundary,
- wherein a dummy MOSFET is positioned at one end of all of the arranged standard cells beyond the cell boundaries.
3 more elements
Dependencies are inferred from the claim text.