Y10S 257/928
Active solid-state devices: with shorted pn or schottky junction other than emitter
Official title: with shorted PN or schottky junction other than emitter junction
Y10S257/928 (Active solid-state devices: with shorted pn or schottky junction other than emitter) appears on 62 US grants and 20 published applications in this corpus.
Search patents in Y10S- Granted patents
- 62
- Published applications
- 20
- Assignees
- 34
- Inventors
- 89
- Latest grant
- 10 Nov 2015
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 5 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 4 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 8 | 2 |
| 2002 | 2 | 3 |
| 2003 | 1 | 2 |
| 2004 | 3 | 0 |
| 2005 | 2 | 4 |
| 2006 | 2 | 3 |
| 2007 | 2 | 1 |
| 2008 | 3 | 4 |
| 2009 | 1 | 0 |
| 2010 | 2 | 0 |
| 2011 | 2 | 1 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Three-terminal antifuse structure having integrated heating elements for a programmable circuit10 Nov 2015US 9,184,129 B2Globalfoundries U.S. 2 LLC
- Antifuse structure having an integrated heating element19 Jul 2011US 7,982,285 B2International Business Machines Corporation
- Four-terminal antifuse structure having integrated heating elements for a programmable circuit1 Feb 2011US 7,880,266 B2International Business Machines Corporation
- Semiconductor layer structure and method of making the same7 Dec 2010US 7,846,814 B2
- Semiconductor layer structure and method of making the same2 Mar 2010US 7,671,371 B2
- Four-terminal antifuse structure having integrated heating elements for a programmable circuit5 May 2011US 2011/0101496 A1International Business Machines Corporation
- Semiconductor Layer Structure And Method Of Making The Same30 Oct 2008US 2008/0265360 A1
- Semiconductor Layer Structure And Method Of Making The Same23 Oct 2008US 2008/0261380 A1
- Antifuse structure having an integrated heating element15 May 2008US 2008/0111210 A1International Business Machines Corporation
- Antifuse structure having an integrated heating element27 Mar 2008US 2008/0073749 A1International Business Machines Corporation
Most cited
By later US patents
- Semiconductor layer structure and method of making the same308US 7,470,598 B22008
- Semiconductor layer structure and method of making the same268US 7,671,371 B22010
- Semiconductor layer structure and method of making the same259US 7,846,814 B22010
- Method of gettering using backside polycrystalline silicon107US 4,053,335 AInternational Business Machines Corporation · 1977
- Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing99US 4,851,358 ADNS Electronic Materials, Inc. · 1989