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US 7,846,814 B2Granted
Semiconductor layer structure and method of making the same
OwnerSang-Yun Leeinventor
Life of this patent
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Abstract
A method of forming a semiconductor structure includes providing a substrate and providing a detach region which is carried by the substrate. A device structure which includes a stack of crystalline semiconductor layers is provided, wherein the detach region is positioned between the device structure and substrate. The stack is processed to form a vertically oriented semiconductor device.
Claims20
A method of forming a semiconductor structure, comprising:
- providing a substrate;
- providing a detach region which is carried by the substrate;
- and
- providing a device structure which includes a stack of crystalline semiconductor layers;
- wherein the detach region is positioned between the device structure and substrate.
2 more elements
A method of forming a semiconductor structure, comprising:
- providing a substrate which consists essentially of single crystalline semiconductor material;
- providing a detach region which is carried by the substrate;
- and
- providing a device structure which consists essentially of a stack of crystalline semiconductor layers;
- wherein the detach region is positioned between the device structure and substrate.
2 more elements
A method of forming a semiconductor structure, comprising:
- providing a first semiconductor substrate;
- providing a detach region which is carried by the first semiconductor substrate, and
- providing a stack of crystalline semiconductor layers which is carried by the first semiconductor substrate, the detach region being positioned between the first semiconductor substrate and the stack.
Dependencies are inferred from the claim text.