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US 7,671,371 B2Granted
Semiconductor layer structure and method of making the same
OwnerSang-Yun Leeinventor
Life of this patent
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Abstract
A semiconductor layer structure includes a donor substrate and a detach region carried by the donor substrate. A device structure is carried by the donor substrate and positioned proximate to the detach region. The device structure includes a stack of crystalline semiconductor layers. The stack of crystalline semiconductor layers includes a pn junction.
Claims20
Apparatus, comprising:
- a donor substrate;
- a device structure carried by the donor substrate, the device structure including a stack of crystalline semiconductor layers,
- wherein the stack of crystalline semiconductor layers includes a semiconductor layer with a graded doping concentration;
- a detach region which extends between the donor substrate and device structure;
- and
- wherein the detach region includes a dielectric material.
3 more elements
Apparatus, comprising:
- a semiconductor substrate;
- a detach region carried by the semiconductor substrate;
- and
- a stack of crystalline silicon semiconductor layers carried by the semiconductor substrate,
- wherein the detach region extends between the semiconductor substrate and stack of crystalline silicon semiconductor layers,
- wherein the stack of crystalline silicon semiconductor layers has a graded doping concentration proximate to the detach region.
3 more elements
Apparatus, comprising:
- a donor substrate;
- a detach region carried by the donor substrate;
- and
- a device structure carried by the donor substrate and positioned proximate to the detach region, the device structure including a stack of crystalline semiconductor layers;
- wherein the stack has a graded doping concentration proximate to the detach region;
- wherein the detach region includes a porous material layer which extends between the donor substrate and device structure.
3 more elements
Dependencies are inferred from the claim text.