Y10S 257/917
Plural dopants of same conductivity type in same region
Y10S257/917 (Plural dopants of same conductivity type in same region) appears on 60 US grants and 14 published applications in this corpus.
Search patents in Y10S- Granted patents
- 60
- Published applications
- 14
- Assignees
- 27
- Inventors
- 64
- Latest grant
- 17 Aug 2010
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 5 | 0 |
| 2001 | 2 | 1 |
| 2002 | 13 | 7 |
| 2003 | 3 | 0 |
| 2004 | 1 | 2 |
| 2005 | 1 | 1 |
| 2006 | 3 | 2 |
| 2007 | 0 | 0 |
| 2008 | 1 | 1 |
| 2009 | 0 | 0 |
| 2010 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor device including a high-breakdown voltage MOS transistor17 Aug 2010US 7,777,294 B2Renesas Technology Corp.
- Plasma implantated impurities in junction region recesses2 Mar 2010US 7,671,358 B2Intel Corporation
- Plasma implantation of impurities in junction region recesses1 Jan 2008US 7,314,804 B2Intel Corporation
- Semiconductor device and method of manufacturing the same18 Apr 2006US 7,030,464 B2NEC Electronics Corporation
- Semiconductor device including a high-breakdown voltage MOS transistor21 Feb 2006US 7,002,210 B2Renesas Technology Corp.
- Plasma implantated impurities in junction region recesses3 Jan 2008US 2008/0001170 A1Intel Corporation
- Plasma implantation of impurities in junction region recesses6 Jul 2006US 2006/0148220 A1Intel Corporation
- Semiconductor device including a high-breakdown voltage MOS transistor9 Feb 2006US 2006/0027880 A1Renesas Technology Corp.
- Low capacitance ESD-protection structure under a bond pad1 Sep 2005US 2005/0189593 A1Microchip Technology Incorporated
- Semiconductor device and method of manufacturing the same9 Sep 2004US 2004/0173855 A1NEC Electronics Corporation
Most cited
By later US patents
- Method of making insulated gate field effect transistor with a lightly doped drain using oxide sidewall spacer and double implantations70US 4,566,175 ATexas Instruments Incorporated · 1986
- Photodetector with enhanced light absorption49US 4,532,537 ARCA Corporation · 1985
- Method for producing a semiconductor device and a semiconductor device45US 5,969,398 AMitsubishi Denki Kabushiki Kaisha · 1999
- Graded LDD implant process for sub-half-micron MOS devices36US 5,719,424 AMicron Technology, Inc. · 1998
- CMOS semiconductor device comprising graded junctions with reduced junction capacitance31US 6,107,149 AAdvanced Micro Devices, Inc. · 2000