Method for producing a semiconductor device and a semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTakashi Murakami
Life of this patent
Estimating the term…
Abstract
A method for producing a semiconductor device which comprises a step for forming a gate electrode on a main surface of a semiconductor substrate via a gate oxide film, and a step for directing plasma ions with a gas mixture comprising a first gas containing a hydride of an impurity element and a second gas containing a fluoride of the impurity element into a surface of the semiconductor substrate.
Claims10
A semiconductor device which comprises a semiconductor substrate, a gate electrode formed on a main surface of the semiconductor substrate via a gate oxide film, and a pair of source/drain regions formed at both sides of the gate electrode which are formed by directing plasma ions with a gas mixture comprising a first gas containing a hydride of boron and a second gas containing a fluoride of boron, a gas mixture comprising a first gas containing phosphine(PH.sub.3) and a second gas containing a fluoride of phosphorous, or a gas mixture comprising a first gas containing arsine(AsH.sub.3) and a second gas containing a fluoride of arsenic.
A semiconductor device which comprises a semiconductor substrate, a gate electrode formed on a main surface of the semiconductor substrate via a sate oxide film, and a pair of source/drain regions formed at both sides of the gate electrode which are formed by directing plasma ions with a gas mixture comprising a first gas containing a hydride of boron and a second gas containing a fluoride of boron, a gas mixture comprising a first gas containing phosphine(PH.sub.3) and a second gas containing a fluoride of phosphorous, or a gas mixture comprising a first gas containing arsine(AsH.sub.3) and a second gas containing a fluoride of arsenic, wherein the gate electrode contains at least one impurity element selected from the group consisting of boron, phosphorus and arsenic.
Dependencies are inferred from the claim text.