Y10S 257/906
Dram with capacitor electrodes used for accessing
Official title: Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
Y10S257/906 (Dram with capacitor electrodes used for accessing) appears on 282 US grants and 161 published applications in this corpus.
Search patents in Y10S- Granted patents
- 282
- Published applications
- 161
- Assignees
- 92
- Inventors
- 389
- Latest grant
- 9 Mar 2021
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 3 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 4 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 11 | 0 |
| 1990 | 11 | 0 |
| 1991 | 15 | 0 |
| 1992 | 6 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 6 | 0 |
| 1997 | 4 | 0 |
| 1998 | 4 | 0 |
| 1999 | 8 | 0 |
| 2000 | 11 | 0 |
| 2001 | 13 | 4 |
| 2002 | 11 | 24 |
| 2003 | 17 | 24 |
| 2004 | 25 | 18 |
| 2005 | 20 | 33 |
| 2006 | 16 | 11 |
| 2007 | 18 | 11 |
| 2008 | 21 | 14 |
| 2009 | 5 | 6 |
| 2010 | 13 | 5 |
| 2011 | 5 | 1 |
| 2012 | 4 | 4 |
| 2013 | 4 | 2 |
| 2014 | 2 | 1 |
| 2015 | 2 | 1 |
| 2016 | 0 | 0 |
| 2017 | 1 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 2 |
| 2021 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Integrated circuitry comprising an array, method of forming an array, method of forming DRAM circuitry, and method used in the fabrication of integrated circuitry9 Mar 2021US 10,943,907 B2Micron Technology, Inc.
- Integrated circuitry comprising an array, method of forming an array, method of forming DRAM circuitry, and method used in the fabrication of integrated circuitry7 Jul 2020US 10,707,211 B2Micron Technology, Inc.
- Method of forming semiconductor device including protrusion type isolation layer22 Aug 2017US 9,741,611 B2Samsung Electronics Co., Ltd.
- Semiconductor device including a thin film transistor and a capacitor30 Jun 2015US 9,070,773 B2Semiconductor Energy Laboratory Co.Ltd.
- Contact structure and semiconductor memory device using the same26 May 2015US 9,041,154 B2Nanya Technology Corporation
- Integrated Circuitry Comprising An Array, Method Of Forming An Array, Method Of Forming DRAM Circuitry, And Method Used In The Fabrication Of Integrated Circuitry20 Aug 2020US 2020/0266197 A1Micron Technology, Inc.
- Integrated Circuitry Comprising An Array, Method Of Forming An Array, Method Of Forming DRAM Circuitry, And Method Used In The Fabrication Of Integrated Circuitry26 Mar 2020US 2020/0098761 A1Micron Technology, Inc.
- Method of forming semiconductor device including protrusion type isolation layer19 Nov 2015US 2015/0333151 A1Samsung Electronics Co., Ltd.
- Contact structure and semiconductor memory device using the same11 Sep 2014US 2014/0252545 A1Nanya Technology Corporation
- Low leakage mim capacitor31 Oct 2013US 2013/0285206 A1Micron Technology, Inc.
Most cited
By later US patents
- Thin oxide sidewall insulators for silicon-over-insulator transistors277US 4,956,307 ATexas Instruments Incorporated · 1990
- Single digit line with cell contact interconnect128US 6,066,870 AMicron Technology, Inc. · 2000
- Conductive container structures having a dielectric cap105US 6,303,956 B1Micron Technology, Inc. · 2001
- 6f2 dram array, a dram array formed on a semiconductive substrate, a method of forming memory cells in a 6f2 dram array and a method of isolating a single row of memory cells in a 6f2 dram array102US 6,545,904 B2Micron Technology, Inc. · 2003
- Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array92US 6,034,389 AInternational Business Machines Corporation · 2000