Low leakage mim capacitor
AssigneeMicron Technology, Inc.
InventorSam Yang
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Abstract
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
Claims20
A container capacitor, comprising:
- a top electrode;
- a metal nitride electrode layer as a bottom electrode;
- a dielectric layer interposed between the top electrode and the metal nitride electrode layer;
- and
- a metal oxide buffer layer adjacent to the metal nitride electrode layer and interposed between the dielectric layer and the metal nitride electrode layer, wherein a metal in the metal oxide buffer layer matches the metal in the metal nitride electrode layer, and wherein a dielectric constant of the metal oxide buffer layer is greater than a dielectric constant of the dielectric layer.
A memory cell comprising a container capacitor and an access transistor, wherein the container capacitor includes:
- a top electrode;
- a metal nitride electrode layer as a bottom electrode;
- a dielectric layer interposed between the top electrode and the metal nitride electrode layer;
- and
- a metal oxide buffer layer adjacent to the metal nitride electrode layer and interposed between the dielectric layer and the metal nitride electrode layer, wherein a metal in the metal oxide buffer layer matches the metal in the metal nitride electrode layer, and wherein a dielectric constant of the metal oxide buffer layer is greater than a dielectric constant of the dielectric layer.
A memory device, comprising:
- an array of memory cells, wherein at least a portion of the memory cells includes a data storage capacitor having a container structure, wherein the data storage capacitor includes:
- a top electrode;
- a metal nitride electrode layer as a bottom electrode;
- a dielectric layer interposed between the top electrode and the metal nitride electrode layer;
- and
- a metal oxide buffer layer adjacent to the metal nitride electrode layer and interposed between the dielectric layer and the metal nitride electrode layer, wherein a metal in the metal oxide buffer layer matches the metal in the metal nitride electrode layer, and wherein a dielectric constant of the metal oxide buffer layer is greater than a dielectric constant of the dielectric layer.
Dependencies are inferred from the claim text.