Contact structure and semiconductor memory device using the same
AssigneeNanya Technology Corporation
InventorsChien-An Yu, Chih-Huang Wu
Life of this patent
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Abstract
A semiconductor memory device includes a substrate having thereon a memory array region and a periphery circuit region. A first dielectric layer covers the memory array region and the periphery circuit region on the substrate. A second dielectric layer covers the memory array region and the periphery circuit region on the first dielectric layer. At least a capacitor structure is provided in the memory array region. The capacitor structure includes an electrode material layer embedded in the second dielectric layer. The semiconductor memory device further includes a contact structure comprising the electrode material layer.
Claims13
A semiconductor memory device, comprising:
- a substrate having thereon a memory array region and a periphery circuit region;
- a first dielectric layer covering the memory array region and the periphery circuit region on the substrate;
- a second dielectric layer covering the memory array region and the periphery circuit region on the first dielectric layer;
- a first opening in the second dielectric layer within the memory array region;
- a second opening in the second dielectric layer;
- at least a capacitor structure in the first opening, the capacitor structure comprising an electrode material layer embedded in the second dielectric layer;
- and
- a contact structure in the second opening comprising the electrode material layer and a contact material layer on the electrode material layer, wherein the contact material layer is in direct contact with the electrode material layer, and wherein the second opening is completely filled with the contact material layer.
6-7. (canceled)
(canceled)
Dependencies are inferred from the claim text.