Thin oxide sidewall insulators for silicon-over-insulator transistors
AssigneeTexas Instruments Incorporated
InventorsGordon P. Pollack, Mishel Matloubian, Ravishankar Sundaresan
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Abstract
A silicon-over-insulator transistor is provided having a semiconductor mesa (40) overlying a buried oxide (42). Insulating regions (50) are formed at the sides of the semiconductor mesa (40). An oxidizable layer (56) is formed over the mesa's insulating region (46). This oxidizable layer (56) is then anisotropically etched, resulting in oxidizable sidewalls (60). An optional foot (70) may be formed at the bottom edge of the oxidizable sidewalls (76). These oxidizable sidewalls (76) are then oxidized, resulting in a pure oxide sidewall (64). The gate (66) is then formed over the pure oxide sidewalls (64) and a gate oxide (62).
Claims16
a method of forming a radiation hard transistor comprising:
- forming a mesa from semiconductor material;
- forming an insulated region adjacent to said mesa;
- forming a conforming oxidizable layer on the sides of said insulator region;
- anisotropically etching said oxidizable layer;
- and
- oxidizing said oxidizable layer to create oxide sidewalls.
a method of forming a transistor comprising:
- forming a mesa from semiconductor material;
- forming an insulator region encompassing said mesa;
- forming a conforming oxidable layer on said insulated region;
- forming a conforming spacer layer on said oxidable layer;
- anisotropically etching said spacer layer and said oxidable layer;
- removing said spacer layer;
- and
- oxidizing said oxidizable layer to create oxide walls.
Dependencies are inferred from the claim text.