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US 6,303,956 B1Granted
Conductive container structures having a dielectric cap
AssigneeMicron Technology, Inc.
InventorsGurtej Singh Sandhu, Alan R. Reinberg
Life of this patent
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Abstract
Container structures for use in integrated circuits and methods of their manufacture. The container structures have a dielectric cap on the top of a conductive container to reduce the risk of container-to-container shorting by insulating against bridging of conductive debris across the tops of adjacent container structures. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
Claims17
A container capacitor, comprising:
- a bottom plate having a closed bottom and sidewalls extending upward from the closed bottom;
- a dielectric cap on a top of the sidewalls;
- a dielectric layer on the bottom plate and the dielectric cap;
- and
- a cell plate on the dielectric layer, wherein the dielectric layer is interposed between the cell plate and the bottom plate.
2 more elements
A container capacitor, comprising:
- a bottom plate having a closed bottom and sidewalls extending upward from the closed bottom, wherein the bottom plate comprises at least one silicon material selected from the group consisting of amorphous silicon, polysilicon and hemispherical grain polysilicon;
- a dielectric cap on a top of the sidewalls, wherein the dielectric cap comprises at least one dielectric material selected from the group consisting of oxides, nitrides and silicon oxynitrides;
- a dielectric layer on the bottom plate and the dielectric cap;
- and
- a cell plate on the dielectric layer, wherein the dielectric layer is interposed between the cell plate and the bottom plate.
2 more elements
A container capacitor, comprising:
- a bottom plate having a closed bottom and sidewalls extending upward from the closed bottom, wherein the bottom plate comprises conductively-doped hemispherical grain polysilicon;
- a dielectric cap on a top of the sidewalls, wherein the dielectric cap comprises silicon oxynitride;
- a dielectric layer on the bottom plate and the dielectric cap;
- and
- a cell plate on the dielectric layer, wherein the dielectric layer is interposed between the cell plate and the bottom plate.
2 more elements
A container capacitor, comprising:
- a bottom plate having a closed bottom and sidewalls extending upward from the closed bottom, wherein the bottom plate formed by a method comprising:
- forming an insulating layer on a substrate;
- forming an opening in the insulating layer, wherein the opening has a bottom on an exposed portion of the substrate and sidewalls defined by the insulating layer;
- forming a conductive layer on the insulating layer and the exposed portion of the substrate;
- forming a fill layer on the conductive layer, wherein the fill layer fills the opening;
- and
- removing the conductive layer and the fill layer to a level below a top of the insulating layer;
- a dielectric cap on a top of the sidewalls, wherein the dielectric cap is formed by a method comprising:
- forming a dielectric layer on the insulating layer, the conductive layer and the fill layer;
- and
- removing the dielectric layer from the insulating layer and the fill layer;
- a dielectric layer on the bottom plate and the dielectric cap;
- and
- a cell plate on the dielectric layer, wherein the dielectric layer is interposed between the cell plate and the bottom plate.
11 more elements
A container capacitor, comprising:
- a bottom plate having a closed bottom and sidewalls extending upward from the closed bottom, wherein the bottom plate formed by a method comprising:
- forming an insulating layer on a substrate;
- forming an opening in the insulating layer, wherein the opening has a bottom on an exposed portion of the substrate and sidewalls defined by the insulating layer;
- forming a conductive layer on the insulating layer and the exposed portion of the substrate;
- forming a fill layer on the conductive layer, wherein the fill layer fills the opening;
- removing the fill layer to a level substantially even with a top of the insulating layer;
- and
- removing the conductive layer to a level below the level below the top of the insulating layer;
- a dielectric cap on a top of the sidewalls, wherein the dielectric cap is formed by a method comprising:
- forming a dielectric layer on the insulating layer, the conductive layer and the fill layer;
- and
- removing the dielectric layer from the insulating layer and the fill layer;
- a dielectric layer on the bottom plate and the dielectric cap;
- and
- a cell plate on the dielectric layer, wherein the dielectric layer is interposed between the cell plate and the bottom plate.
12 more elements
Dependencies are inferred from the claim text.