Y10S 257/915
Active solid-state devices: with titanium nitride portion or region
Official title: with titanium nitride portion or region
Y10S257/915 (Active solid-state devices: with titanium nitride portion or region) appears on 288 US grants and 31 published applications in this corpus.
Search patents in Y10S- Granted patents
- 288
- Published applications
- 31
- Assignees
- 70
- Inventors
- 406
- Latest grant
- 11 Nov 2014
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 16 | 0 |
| 1990 | 11 | 0 |
| 1991 | 9 | 0 |
| 1992 | 7 | 0 |
| 1993 | 9 | 0 |
| 1994 | 18 | 0 |
| 1995 | 17 | 0 |
| 1996 | 30 | 0 |
| 1997 | 31 | 0 |
| 1998 | 19 | 0 |
| 1999 | 22 | 0 |
| 2000 | 29 | 0 |
| 2001 | 16 | 6 |
| 2002 | 15 | 6 |
| 2003 | 8 | 5 |
| 2004 | 10 | 4 |
| 2005 | 4 | 4 |
| 2006 | 1 | 1 |
| 2007 | 0 | 3 |
| 2008 | 3 | 0 |
| 2009 | 2 | 0 |
| 2010 | 1 | 0 |
| 2011 | 1 | 0 |
| 2012 | 0 | 2 |
| 2013 | 0 | 0 |
| 2014 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of treating an oxidized layer of metal nitride11 Nov 2014US 8,883,654 B2Altis Semiconductor
- Titanium nitride films21 Jan 2014US 8,633,110 B2Micron Technology, Inc.
- Titanium nitride films15 Nov 2011US 8,058,729 B2Micron Technology, Inc.
- Method of forming amorphous TiN by thermal chemical vapor deposition (CVD)8 Jun 2010US 7,732,307 B2Aviza Technology, Inc.
- Semiconductor device and method of manufacturing the same25 Aug 2009US 7,579,231 B2Kabushiki Kaisha Toshiba
- Method of treating an oxidized layer of metal nitride13 Sep 2012US 2012/0228642 A1Altis Semiconductor
- Titanium nitride films8 Mar 2012US 2012/0056326 A1Micron Technology, Inc.
- Ald formed titanium nitride films30 Aug 2007US 2007/0200243 A1Micron Technology, Inc.
- Reduced cell-to-cell shorting for memory arrays14 Jun 2007US 2007/0131995 A1Micron Technology, Inc.
- ALD formed titanium nitride films25 Jan 2007US 2007/0020923 A1Micron Technology, Inc.
Most cited
By later US patents
- Wiring structure of semiconductor device and method for manufacturing the same486US 5,998,870 ASamsung Electronics Co., Ltd. · 1999
- Semiconductor device and method of manufacturing the same372US 6,737,716 B1Kabushiki Kaisha Toshiba · 2004
- Method to form a low resistant bond pad interconnect329US 5,384,284 AMicron Semiconductor, Inc. · 1995
- Contact plug and interconnect employing a barrier lining and a backfilled conductor material212US 4,884,123 AAdvanced Micro Devices, Inc. · 1989
- High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism195US 4,847,674 AAdvanced Micro Devices, Inc. · 1989