Titanium nitride films
AssigneeMicron Technology, Inc.
InventorsBrenda D Kraus, Eugene P. Marsh
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Abstract
The use of a monolayer or partial monolayer sequencing process to form conductive titanium nitride produces a reliable structure for use in a variety of electronic devices. In an embodiment, a structure can be formed by using ammonia and carbon monoxide reactant materials with respect to a titanium-containing precursor exposed to a substrate. Such a TiN layer has a number of uses including, but not limited to, use as a diffusion barrier underneath another conductor or use as an electro-migration preventing layer on top of a conductor. Such deposited TiN material may have characteristics associated with a low resistivity, a smooth topology, high deposition rates, excellent step coverage, and electrical continuity.
Claims19
A method comprising:
- forming titanium nitride on a substrate by a monolayer or partial monolayer sequencing process including:
- pulsing a precursor of tetrakisdimethylamidotitanium to the substrate;
- pulsing a reactant containing nitrogen to the substrate;
- and
- pulsing a reactant containing no nitrogen to the substrate.
A method comprising:
- forming titanium nitride on a substrate by a monolayer or partial monolayer sequencing process including:
- pulsing a precursor containing titanium to the substrate;
- pulsing a reactant containing ammonia to the substrate;
- and
- pulsing a reactant containing carbon monoxide to the substrate.
An electronic apparatus comprising:
- a substrate;
- and
- titanium nitride coupled to a semiconductor device on the substrate, the titanium nitride having a composition of TiNx that varies from an x value of 0.5 at one portion of the titanium nitride to an x value greater than 1.0 at another portion of the titanium nitride.
Dependencies are inferred from the claim text.