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AssigneeAviza Technology, Inc.
InventorsStephen Robert Burgess, Andrew Price, Nicholas Rimmer, John MacNeil
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A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS (trisdimethlyaminosilane); the two liquids are found to form a stable solution when mixed together. Deposition occurs via pyrolysis of the vaporised precursor and NH3 on a heated substrate surface. Experimental results show that we have modified the precursor in such a way to reduce gas phase component of the deposition when compared to the unmodified TDEAT-NH3 reaction. Deposition temperatures were the range of 250-450° C. and under a range of process conditions the modified precursor shows improvements in coating conformality, a reduction in resistivity and an amorphous structure, as shown by TEM and XRD analysis. SIMS and scanning AES have shown that the film is essentially stoichiometric in Ti:N ratio and contains low levels of C (˜0.4 at %) and trace levels of incorporated Si (0.01<Si<0.5 at %).
A method of forming a barrier layer comprising thermal chemical vapour deposition (CVD) of amorphous TiN from silicon- and titanium-containing compounds and nitrogen or a nitrogen containing compound, wherein the titanium-containing compound is a metal organic compound, and wherein a silicon content in the amorphous TiN is less than 0.5 at. %.
A method of forming truly amorphous TiN comprising Chemical Vapour Deposition (CVD) of TiN from a silicon-doped titanium containing compound and nitrogen or a nitrogen containing compound, and wherein a silicon content in the TiN is less than 0.5 at. %.
Dependencies are inferred from the claim text.