Method to form a low resistant bond pad interconnect
AssigneeMicron Semiconductor, Inc.
InventorsTrung T. Doan, Mark E. Tuttle
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Abstract
The present invention develops a bond pad interconnect in an integrated circuit device, by forming an aluminum pad; bonding a metal layer (such as copper (Cu), nickel (Ni), tungsten (W), gold (Au), silver (Ag) or platinum (Pt)) or a metal alloy (such as titanium nitride) to the aluminum bond pad by chemical vapor deposition or by electroless deposition; and adhering a conductive epoxy film to the metal layer, thereby forming a low resistive bond pad interconnect.
Claims24
A process to form a pad interconnect, said process comprising:
- a) forming a conductive supporting layer serving as said pad;
- b) bonding an intermediate conductive layer to said conductive supporting layer;
- and
- c) adhering an interconnecting material, comprising a conductive epoxy material, to said intermediate conductive layer.
A process for forming a bond pad interconnect, said process comprising:
- a) forming an aluminum supporting layer serving as said bond pad;
- b) bonding an intermediate conductive layer to said aluminum supporting layer;
- and
- c) adhering an interconnecting conductive material, comprising a conductive epoxy material, to said intermediate conductive layer.
A process for forming a bond pad interconnect in an integrated circuit device, said process comprising:
- a) forming an aluminum supporting layer serving as said bond pad;
- b) bonding an intermediate conductive layer to said aluminum supporting layer;
- and
- c) adhering an interconnecting conductive material, comprising a conductive epoxy material, to said intermediate conductive layer.
Dependencies are inferred from the claim text.