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US 2012/0228642 A1Published application
Method of treating an oxidized layer of metal nitride
AssigneeAltis Semiconductor
InventorsMichel Aube, Pierre De Person
Life of this patent
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Abstract
The present arrangement provides a method of treating an oxidized layer of metal nitride, including oxidizing a layer (2) of metal oxide at the surface of a first layer (1) of nitride of said metal using a plasma of an oxidizing species with an oxidation number that is greater than that of oxygen in order to form a metallic layer (3) of a compound based on said metal; and reducing the metallic layer (3) formed in step i) using a plasma of hydrogen and nitrogen to form a second layer (4) of nitride of said metal.
Claims14
A method of treating an oxidized layer of metal nitride, comprising the steps of:
- i) oxidizing a layer of metal oxide at the surface of a first layer of nitride of said metal using a plasma of an oxidizing species with an oxidation number that is greater than that of oxygen in order to form a metallic layer of a compound based on said metal;
- and
- ii) reducing the metallic layer formed in step i) using a plasma of hydrogen and nitrogen to form a second layer of nitride of said metal.
Dependencies are inferred from the claim text.