Ald formed titanium nitride films

An electronic system comprising:

• a controller;
• an electronic device coupled to the controller, wherein the electronic device includes:
• a conductive layer containing an atomic layer deposited titanium nitride layer in an integrated circuit;
• the conductive layer formed by tetrakisdiethylamidotitanium, ammonia (NH3) and carbon monoxide (CO);
• and
• the conductive layer having a step coverage greater than 80%, and a resistivity of less than 600 μohm-cm.

An electronic device comprising:

• a semiconductor substrate including at least one transistor and at least one metallic interconnection layer;
• a first conductive layer disposed below and in direct contact with a first metallic interconnection layer and above the semiconductor substrate, and a second conductive layer disposed above and in contact with a top portion of the first metallic interconnection layer;
• the first and second conductive layers including titanium nitride having a chemical formula of TiNX;
• and
• a second metallic interconnection layer including conductive layers in direct contact with both a top and a bottom surface.