Back to results
US 7,579,231 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsKouji Matsuo, Tomohiro Saito, Kyoichi Suguro, Shinichi Nakamura
Life of this patent
Estimating the term…
Abstract
Disclosed is a method of manufacturing a semiconductor device, comprising forming a metal compound film directly or indirectly on a semiconductor substrate, forming a metal-containing insulating film consisting of a metal oxide film or a metal silicate film by oxidizing the metal compound film, and forming an electrode on the metal-containing insulating film.
Claims12
A method of manufacturing a semiconductor device, comprising:
- forming a first insulating film, selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film, on a semiconductor substrate;
- forming a metal compound film on the first insulating film;
- forming a second insulating film comprising a metal oxide film or a metal silicate film by oxidizing said metal compound film;
- and
- forming an electrode on said second insulating film,
- wherein said metal compound film does not contain tungsten.
3 more elements
A method of manufacturing a semiconductor device comprising:
- forming a metal compound film directly or indirectly on a semiconductor substrate;
- forming a metal-containing insulating film comprising a metal oxide film or a metal silicate film by oxidizing said metal compound film;
- and
- forming an electrode on said metal-containing insulating film,
- wherein said metal-containing insulating film comprises a plurality of first insulating regions formed of grains containing a metal oxide of a metal element contained in said metal compound film and a second insulating region formed of an amorphous insulating material, and each of said first insulating regions is formed in said second insulating region, and
- wherein said metal compound film does not contain tungsten.
3 more elements
Dependencies are inferred from the claim text.