Y10S 257/927
Different doping levels in different parts of pn junction to produce shaped
Official title: Different doping levels in different parts of PN junction to produce shaped depletion layer
Y10S257/927 (Different doping levels in different parts of pn junction to produce shaped) appears on 33 US grants and 10 published applications in this corpus.
Search patents in Y10S- Granted patents
- 33
- Published applications
- 10
- Assignees
- 31
- Inventors
- 70
- Latest grant
- 2 Mar 2010
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 0 |
| 2002 | 0 | 3 |
| 2003 | 0 | 1 |
| 2004 | 3 | 2 |
| 2005 | 1 | 1 |
| 2006 | 3 | 1 |
| 2007 | 3 | 2 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
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- Design and fabrication of rugged FRED30 Jan 2007US 7,169,634 B2Advanced Power Technology, Inc.
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- Design and fabrication of rugged fred, power mosfet or igbt3 May 2007US 2007/0096237 A1Microsemi Corp. —Power Products Group
- Semiconductor device and method for fabricating the same8 Mar 2007US 2007/0054456 A1Matsushita Electric Industrial Co., Ltd.
- Solid-state image pickup apparatus27 Jul 2006US 2006/0163684 A1Kabushiki Kaisha Toshiba
- Photodiode21 Jul 2005US 2005/0156182 A1Thomson Licensing
- Design and fabrication of rugged FRED26 Aug 2004US 2004/0164347 A1Advanced Power Technology, Inc., a Delaware corporation
Most cited
By later US patents
- High voltage mosfet structure161US 6,081,009 AIntersil Corporation · 2000
- Threshold voltage control layer in a semiconductor device120US 7,304,350 B2Matsushita Electric Industrial Co., Ltd. · 2007
- High voltage semiconductor structure113US 6,066,878 AIntersil Corporation · 2000
- High voltage termination with buried field-shaping region92US 6,011,298 ASTMicroelectronics S.r. l. · 2000
- Solid-state image pickup apparatus69US 6,690,423 B1Kabushiki Kaisha Toshiba · 2004