High voltage mosfet structure
AssigneeIntersil Corporation
InventorJohn M. S. Neilson
Life of this patent
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Abstract
A high voltage MOSFET with low on-resistance and a method of lowering the on-resistance for a specific device breakdown voltage of a high voltage MOSFET. The MOSFET includes a blocking layer of a first conductivity type having vertical sections of a second conductivity type or the blocking layer may include alternating vertical sections of a first and second conductivity type.
Claims1
A vertically conducting high voltage MOSFET having a voltage supporting region comprising a horizontal layer having an avalanche breakdown voltage, wherein if the electric field in said layer reaches said avalanche breakdown voltage, the electric field over substantially the entire vertical thickness of said layer reaches said avalanche breakdown voltage.
Dependencies are inferred from the claim text.