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AssigneeKabushiki Kaisha Toshiba
InventorsNobuo Nakamura, Hisanori Ihara, Ikuko Inoue, Hidenori Shibata, Akiko Nomachi, Yoshiyuki Shioyama, Hidetoshi Nozaki, Masako Hori, Akira Makabe, Hiroshi Naruse, Hideki Inokuma, Seigo Abe, Hirofumi Yamashita, Tetsuya Yamaguchi
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The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
A solid-state image pickup apparatus which incorporates a semiconductor substrate having an image pickup region including unit pixels disposed in a two-dimensional configuration and signal scanning sections for reading signals from the pixels in the image pickup region, the solid-state image pickup apparatus comprising:
A solid-state image pickup apparatus incorporating a first-conduction-type well region formed on a semiconductor substrate, a photodiode section formed on the well region and having a second-conduction-type region, a first-conduction-type surface layer formed on the second-conduction-type region of the photodiode section, a second-conduction-type drain region formed in the first-conduction-type well region adjacent to the second-conduction-type region of the photodiode section and a gate section of a reading transistor formed above the well region at a position between the drain region and the second-conduction-type region of the photodiode, the solid-state image pickup apparatus comprising:
A solid-state image pickup apparatus incorporating a photodiode region, which has a shield layer for preventing surface recombination and which is formed into a surface shield structure, and a reading gate electrode for reading charges in the photodiode region, the solid-state image pickup apparatus comprising:
A solid-state image pickup apparatus comprising:
Dependencies are inferred from the claim text.