H10D 30/021
Of fets having insulated gates [igfet]
Official title: {of FETs having insulated gates [IGFET]}
H10D30/021 (Of fets having insulated gates [igfet]) appears on 53,451 US grants and 56,698 published applications in this corpus.
Search patents in H10D- Granted patents
- 53,451
- Published applications
- 56,698
- Assignees
- 2,803
- Inventors
- 36,151
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 8 | 0 |
| 1977 | 16 | 0 |
| 1978 | 19 | 0 |
| 1979 | 12 | 0 |
| 1980 | 17 | 0 |
| 1981 | 27 | 0 |
| 1982 | 27 | 0 |
| 1983 | 22 | 0 |
| 1984 | 17 | 0 |
| 1985 | 34 | 0 |
| 1986 | 32 | 0 |
| 1987 | 56 | 0 |
| 1988 | 51 | 0 |
| 1989 | 86 | 0 |
| 1990 | 80 | 0 |
| 1991 | 115 | 0 |
| 1992 | 162 | 0 |
| 1993 | 194 | 0 |
| 1994 | 239 | 0 |
| 1995 | 290 | 0 |
| 1996 | 332 | 0 |
| 1997 | 389 | 0 |
| 1998 | 561 | 0 |
| 1999 | 795 | 0 |
| 2000 | 882 | 0 |
| 2001 | 971 | 325 |
| 2002 | 973 | 1047 |
| 2003 | 1028 | 1001 |
| 2004 | 1057 | 1334 |
| 2005 | 964 | 1783 |
| 2006 | 1159 | 1853 |
| 2007 | 1142 | 1845 |
| 2008 | 1176 | 2005 |
| 2009 | 1254 | 1800 |
| 2010 | 1672 | 1632 |
| 2011 | 1651 | 1840 |
| 2012 | 1490 | 1894 |
| 2013 | 1913 | 2250 |
| 2014 | 2400 | 2762 |
| 2015 | 2786 | 3250 |
| 2016 | 3228 | 3292 |
| 2017 | 3246 | 2988 |
| 2018 | 2928 | 2909 |
| 2019 | 3034 | 3049 |
| 2020 | 2904 | 3129 |
| 2021 | 2395 | 2789 |
| 2022 | 2235 | 2862 |
| 2023 | 2097 | 2808 |
| 2024 | 2090 | 2580 |
| 2025 | 2079 | 2314 |
| 2026 | 1116 | 1357 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 30/024Of fin field-effect transistors [finfet]14,324
- H10D 30/031Of thin-film transistors [tft]11,331
- H10D 30/028Of double-diffused metal oxide semiconductor [dmos] fets7,669
- H10D 30/0223Having source and drain regions or source and drain extensions self-aligned to6,710
- H10D 30/0212Using self-aligned silicidation5,171
- H10D 30/025Of vertical igfets3,804
- H10D 30/0411Of fets having floating gates3,705
- H10D 30/027Of lateral single-gate igfets3,191
All 17 subgroupsShow fewer
- H10D 30/0221Having asymmetry in the channel direction2,682
- H10D 30/0413Of fets having charge-trapping gate insulators2,572
- H10D 30/0415Of fets having ferroelectric gate insulators737
- H10D 30/022Having lightly-doped source or drain extensions selectively formed at the sides of667
- H10D 30/0217Forming self-aligned punch-through stoppers or threshold implants under gate regions631
- H10D 30/023Having multiple independently-addressable gate electrodes influencing the same channel526
- H10D 30/026Having laterally-coplanar source and drain regions, a gate at the sides of411
- H10D 30/0218Having pocket halo regions selectively formed at the sides of the gates228
- H10D 30/0215Using self-aligned selective metal deposition simultaneously on gate electrodes and the source197
Recent patents
- Semiconductor device and method of fabricating the same6 Oct 2026US 12,757,405 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method for fabricating the same6 Oct 2026US 12,757,415 B2United Microelectronics Corp.
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor structure and methods of formation6 Oct 2026US 12,757,428 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with embedded sigma-shaped structure6 Oct 2026US 12,757,431 B2Nanya Technology Corporation
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313872 A1SK hynix Inc.
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Semiconductor devices and methods of manufacture thereof1,575US 8,785,285 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- MOSFET having a double gate1,461US 6,646,307 B1Advanced Micro Devices, Inc. · 2003