Semiconductor device with embedded sigma-shaped structure
AssigneeNanya Technology Corporation
InventorTeng-Yen Huang
Life of this patent
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Abstract
The present disclosure provides a semiconductor device including a semiconductor substrate, a semiconductor fin, a first filled trench and a second filled trench. The semiconductor fin is extending upwards along a first direction from the semiconductor substrate, comprising a channel region. The first filled trench and a second filled trench are formed in the semiconductor fin. The first filled trench, the channel region, and the second filled trench are sequentially arranged along a second direction. A width of the channel region along a third direction is different from a width of the first filled trench along the third direction. The first direction, the second direction, and the third direction are perpendicular to each other.
Claims18
A semiconductor device, comprising:
- a semiconductor substrate;
- a semiconductor fin extending upwards along a first direction from the semiconductor substrate, comprising a channel region;
- and
- a first filled trench and a second filled trench formed in the semiconductor fin, wherein the first filled trench, the channel region, and the second filled trench are sequentially arranged along a second direction,
- wherein a width of the channel region along a third direction is different from a width of the first filled trench along the third direction, wherein the first direction, the second direction, and the third direction are perpendicular to each other;
- wherein the first filled trench comprises:
- a first sigma portion;
- a second sigma portion below the first sigma portion;
- and
- a middle portion connecting the first sigma portion and the second sigma portion, wherein the middle portion has vertical sidewalls extended between sidewalls of the first sigma portion and sidewalls of the second sigma portion;
- wherein a length of the middle portion is equal to a length of an opening of the first filled trench along the second direction.
Dependencies are inferred from the claim text.