H10D 30/01
Manufacture or treatment
H10D30/01 (Manufacture or treatment) appears on 61,104 US grants and 68,393 published applications in this corpus.
Search patents in H10D- Granted patents
- 61,104
- Published applications
- 68,393
- Assignees
- 3,329
- Inventors
- 42,254
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 14 | 0 |
| 1977 | 19 | 0 |
| 1978 | 23 | 0 |
| 1979 | 16 | 0 |
| 1980 | 26 | 0 |
| 1981 | 40 | 0 |
| 1982 | 40 | 0 |
| 1983 | 31 | 0 |
| 1984 | 30 | 0 |
| 1985 | 54 | 0 |
| 1986 | 48 | 0 |
| 1987 | 81 | 0 |
| 1988 | 79 | 0 |
| 1989 | 117 | 0 |
| 1990 | 121 | 0 |
| 1991 | 150 | 0 |
| 1992 | 208 | 0 |
| 1993 | 253 | 0 |
| 1994 | 305 | 0 |
| 1995 | 352 | 0 |
| 1996 | 390 | 0 |
| 1997 | 453 | 0 |
| 1998 | 622 | 0 |
| 1999 | 859 | 0 |
| 2000 | 935 | 0 |
| 2001 | 1028 | 342 |
| 2002 | 1020 | 1095 |
| 2003 | 1077 | 1069 |
| 2004 | 1112 | 1427 |
| 2005 | 1019 | 1873 |
| 2006 | 1223 | 1955 |
| 2007 | 1203 | 1954 |
| 2008 | 1234 | 2163 |
| 2009 | 1339 | 1925 |
| 2010 | 1811 | 1807 |
| 2011 | 1785 | 2056 |
| 2012 | 1636 | 2148 |
| 2013 | 2133 | 2600 |
| 2014 | 2730 | 3188 |
| 2015 | 3155 | 3625 |
| 2016 | 3593 | 3612 |
| 2017 | 3580 | 3344 |
| 2018 | 3221 | 3184 |
| 2019 | 3361 | 3445 |
| 2020 | 3287 | 3630 |
| 2021 | 2755 | 3328 |
| 2022 | 2629 | 3611 |
| 2023 | 2520 | 3919 |
| 2024 | 2678 | 4061 |
| 2025 | 2891 | 4288 |
| 2026 | 1818 | 2744 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 30/021Of fets having insulated gates [igfet]53,451
- H10D 30/019Of fets having stacked nanowire, nanosheet or nanoribbon channels4,633
- H10D 30/015Of fets having heterojunction interface channels or heterojunction gate electrodes4,346
- H10D 30/014Of fets having zero-dimensional [0d] or one-dimensional [1d] channels2,621
- H10D 30/051Of fets having pn junction gates840
- H10D 30/061Of fets having schottky gates770
- H10D 30/017Of fets having two-dimensional material channels284
- H10D 30/012Of static induction transistors [sit]120
Recent patents
- Semiconductor device and method of fabricating the same6 Oct 2026US 12,757,405 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method for fabricating the same6 Oct 2026US 12,757,415 B2United Microelectronics Corp.
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method6 Oct 2026US 12,757,423 B2Globalfoundries Singapore Pte. Ltd.
- Selective deposition of gate dielectric layer of semiconductor device and the semiconductor device manufactured thereby6 Oct 2026US 12,757,424 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
- Semiconductor structure and method for manufacturing the same8 Oct 2026US 2026/0313867 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313872 A1SK hynix Inc.
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Semiconductor devices and methods of manufacture thereof1,575US 8,785,285 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- MOSFET having a double gate1,461US 6,646,307 B1Advanced Micro Devices, Inc. · 2003