H10D 30/00
Field-effect transistors [fet]
Official title: Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00)
H10D30/00 (Field-effect transistors [fet]) appears on 102,676 US grants and 113,962 published applications in this corpus.
Search patents in H10D- Granted patents
- 102,676
- Published applications
- 113,962
- Assignees
- 5,114
- Inventors
- 64,060
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 59 | 0 |
| 1977 | 82 | 0 |
| 1978 | 90 | 0 |
| 1979 | 71 | 0 |
| 1980 | 98 | 0 |
| 1981 | 121 | 0 |
| 1982 | 106 | 0 |
| 1983 | 107 | 0 |
| 1984 | 113 | 0 |
| 1985 | 134 | 0 |
| 1986 | 169 | 0 |
| 1987 | 206 | 0 |
| 1988 | 203 | 0 |
| 1989 | 268 | 0 |
| 1990 | 285 | 0 |
| 1991 | 396 | 0 |
| 1992 | 388 | 0 |
| 1993 | 413 | 0 |
| 1994 | 533 | 0 |
| 1995 | 581 | 0 |
| 1996 | 603 | 0 |
| 1997 | 728 | 0 |
| 1998 | 974 | 0 |
| 1999 | 1215 | 0 |
| 2000 | 1319 | 0 |
| 2001 | 1523 | 591 |
| 2002 | 1542 | 1775 |
| 2003 | 1707 | 1796 |
| 2004 | 1870 | 2460 |
| 2005 | 1766 | 3276 |
| 2006 | 2098 | 3500 |
| 2007 | 2115 | 3628 |
| 2008 | 2149 | 3863 |
| 2009 | 2480 | 3626 |
| 2010 | 3242 | 3370 |
| 2011 | 3192 | 3755 |
| 2012 | 3046 | 3969 |
| 2013 | 3822 | 4428 |
| 2014 | 4714 | 5185 |
| 2015 | 5156 | 6028 |
| 2016 | 5858 | 6152 |
| 2017 | 5992 | 5896 |
| 2018 | 5485 | 5471 |
| 2019 | 5639 | 5599 |
| 2020 | 5348 | 5968 |
| 2021 | 4514 | 5413 |
| 2022 | 4243 | 5779 |
| 2023 | 4050 | 6091 |
| 2024 | 4378 | 6213 |
| 2025 | 4552 | 6122 |
| 2026 | 2933 | 4008 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 30/60Insulated-gate field-effect transistors [igfet]85,736
- H10D 30/01Manufacture or treatment61,104
- H10D 30/40Fets having zero-dimensional [0d], one-dimensional [1d] or two-dimensional [2d] charge carrier gas10,508
- H10D 30/501Fets having stacked nanowire, nanosheet or nanoribbon channels5,526
- H10D 30/80Fets having rectifying junction gate electrodes2,686
- H10D 30/202Fets having static field-induced regions265
- H10D 30/204Velocity modulation transistors [vmt]17
Recent patents
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- Display device and electronic device6 Oct 2026US 12,755,707 B2Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor memory devices with dielectric fin structures6 Oct 2026US 12,755,790 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Electrostatic discharge circuit, display substrate, and display device6 Oct 2026US 12,756,181 B2Boe Technology Group Co., Ltd.
- Integrated resistor-transistor-capacitor snubber6 Oct 2026US 12,756,386 B2Semiconductor Components Industries, LLC
- Display device8 Oct 2026US 2026/0311650 A1Samsung Display Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0311745 A1Semiconductor Energy Laboratory Co.Ltd.
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film4,076US 7,061,014 B2Japan Science and Technology Agency · 2006
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device4,046US 7,297,977 B2Hewlett-Packard Development Company, L. P. · 2007
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004