H10D 30/204
Velocity modulation transistors [vmt]
Official title: {Velocity modulation transistors [VMT]}
H10D30/204 (Velocity modulation transistors [vmt]) appears on 17 US grants and 10 published applications in this corpus.
Search patents in H10D- Granted patents
- 17
- Published applications
- 10
- Assignees
- 15
- Inventors
- 47
- Latest grant
- 20 May 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 1 |
| 2015 | 1 | 0 |
| 2016 | 0 | 1 |
| 2017 | 0 | 0 |
| 2018 | 1 | 0 |
| 2019 | 1 | 1 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 0 | 2 |
| 2023 | 1 | 0 |
| 2024 | 0 | 1 |
| 2025 | 2 | 1 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor devices including gate spacer20 May 2025US 12,310,079 B2Samsung Electronics Co., Ltd.
- Network device having transistors employing charge-carrier mobility modulation to drive operation beyond transition frequency25 Mar 2025US 12,261,216 B2Marvell Asia Pte Ltd
- Semiconductor devices including gate spacer7 Nov 2023US 11,810,964 B2Samsung Electronics Co., Ltd.
- Dual channel/gate vertical field-effect transistor (FET) for use with a perpendicular magnetic tunnel junction (PMTJ)1 Oct 2019US 10,431,628 B2Spin Memory, Inc.
- Methods and systems for ultra-high quality gated hybrid devices and sensors5 Jun 2018US 9,991,370 B2The Royal Institution for the Advancement of Learning/Mcgill University
- High voltage finfet device and method16 Apr 2026US 2026/0107489 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices including gate spacer14 Aug 2025US 2025/0261425 A1Samsung Electronics Co., Ltd.
- Semiconductor devices including gate spacer1 Feb 2024US 2024/0038873 A1Samsung Electronics Co., Ltd.
- Network device having transistors employing charge-carrier mobility modulation to drive operation beyond transition frequency29 Dec 2022US 2022/0416066 A1Marvell Asia Pte Ltd
- Barrier Modulating Transistor29 Dec 2022US 2022/0416067 A1Solaredge Technologies Ltd.
Most cited
By later US patents
- Heterojunction and dual channel semiconductor field effect transistor or negative transconductive device87US 4,806,998 AThomson-CSF · 1989
- Method of forming heterostructure field effect transistor38US 5,196,359 ATexas Instruments Incorporated · 1993
- Tunneling transfer devices33US 4,745,452 AMassachusetts Institute of Technology · 1988
- Heterostructure field effect transistor33US 5,091,759 ATexas Instruments Incorporated · 1992
- Field-effect semiconductor device16US 5,404,032 ASanyo Electric Co., Ltd. · 1995