Heterojunction and dual channel semiconductor field effect transistor or negative transconductive device
AssigneeThomson-CSF
InventorsBorge Vinter, Armand Tardella
Life of this patent
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Abstract
A heterojunction semiconductor device which has a dual channel with a high mobility layer, a barrier layer and a low mobility layer. The barrier layer is thin enough for the carriers to pass from the low mobility layer to the high mobility layer by tunnel effect, during variations of the polarization electrical field of the dual channel. The device can be used as field effect transistors with a quick response time, without variation in the charge of the channel but with a variation in the mobility of the carriers; or as negative transconductance devices for oscillators or complementary transistors in integrated circuits.
Claims9
A heterojunction semiconductor device comprising an insulating substrate, a heterojunction along which a conductive channel extends between two electrodes, and an upper layer with a first forbidden gap, wherein said channel comprises between the substrate and the upper layer:
- a first layer of semiconductive material, a barrier layer, and a second layer of semiconductive material;
- said first and second layers having a second forbidden gap smaller than the forbidden gap of the upper layer, and said barrier layer having a forbidden gap of the same order as the forbidden gap of the upper layer;
- said first and second layers having different electrical mobilities, respectively low and high mobility, and said barrier layer being thin enough for the carriers to pass from the first to the second layer and from the second to the first layer by tunnel effect according to variations of a polarization electrical field applied to said channel causing variations in conduction of said channel.
Dependencies are inferred from the claim text.