H10D 30/60
Insulated-gate field-effect transistors [igfet]
Official title: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
H10D30/60 (Insulated-gate field-effect transistors [igfet]) appears on 85,736 US grants and 97,192 published applications in this corpus.
Search patents in H10D- Granted patents
- 85,736
- Published applications
- 97,192
- Assignees
- 4,246
- Inventors
- 53,620
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 30 | 0 |
| 1977 | 61 | 0 |
| 1978 | 61 | 0 |
| 1979 | 51 | 0 |
| 1980 | 61 | 0 |
| 1981 | 79 | 0 |
| 1982 | 60 | 0 |
| 1983 | 75 | 0 |
| 1984 | 64 | 0 |
| 1985 | 77 | 0 |
| 1986 | 117 | 0 |
| 1987 | 119 | 0 |
| 1988 | 122 | 0 |
| 1989 | 160 | 0 |
| 1990 | 188 | 0 |
| 1991 | 275 | 0 |
| 1992 | 254 | 0 |
| 1993 | 253 | 0 |
| 1994 | 352 | 0 |
| 1995 | 381 | 0 |
| 1996 | 408 | 0 |
| 1997 | 498 | 0 |
| 1998 | 680 | 0 |
| 1999 | 775 | 0 |
| 2000 | 807 | 0 |
| 2001 | 973 | 442 |
| 2002 | 1061 | 1345 |
| 2003 | 1305 | 1404 |
| 2004 | 1474 | 1983 |
| 2005 | 1442 | 2731 |
| 2006 | 1756 | 2947 |
| 2007 | 1764 | 3088 |
| 2008 | 1840 | 3326 |
| 2009 | 2097 | 3128 |
| 2010 | 2758 | 2866 |
| 2011 | 2731 | 3205 |
| 2012 | 2645 | 3423 |
| 2013 | 3251 | 3711 |
| 2014 | 3983 | 4286 |
| 2015 | 4308 | 5179 |
| 2016 | 5063 | 5396 |
| 2017 | 5229 | 5141 |
| 2018 | 4832 | 4875 |
| 2019 | 5017 | 4923 |
| 2020 | 4673 | 5257 |
| 2021 | 3995 | 4735 |
| 2022 | 3748 | 4979 |
| 2023 | 3530 | 5247 |
| 2024 | 3766 | 5262 |
| 2025 | 3947 | 5284 |
| 2026 | 2540 | 3029 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 30/67Thin-film transistors [tft]32,096
- H10D 30/62Fin field-effect transistors [finfet]15,947
- H10D 30/64Double-diffused metal-oxide semiconductor [dmos] fets12,613
- H10D 30/791Arrangements for exerting mechanical stress on the crystal lattice of the channel10,653
- H10D 30/601Having lightly-doped drain or source extensions9,394
- H10D 30/68Floating-gate igfets8,040
- H10D 30/69Igfets having charge trapping gate insulators5,231
- H10D 30/63Vertical igfets5,044
All 14 subgroupsShow fewer
- H10D 30/751Having composition variations in the channel regions2,970
- H10D 30/611Having multiple independently-addressable gate electrodes influencing the same channel1,400
- H10D 30/701Igfets having ferroelectric gate insulators1,222
- H10D 30/711Having floating bodies1,038
- H10D 30/637Lateral igfets having no inversion channels529
- H10D 30/721Having a gate-to-body connection, i.e. bulk dynamic threshold voltage igfet98
Recent patents
- Biosensor based on metal oxide thin film transistor and manufacturing method for the same6 Oct 2026US 12,754,162 B2Ajou University Industry-Academic Cooperation Foundation
- Display device and electronic device6 Oct 2026US 12,755,707 B2Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor memory devices with dielectric fin structures6 Oct 2026US 12,755,790 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Electrostatic discharge circuit, display substrate, and display device6 Oct 2026US 12,756,181 B2Boe Technology Group Co., Ltd.
- Integrated resistor-transistor-capacitor snubber6 Oct 2026US 12,756,386 B2Semiconductor Components Industries, LLC
- Display device8 Oct 2026US 2026/0311650 A1Samsung Display Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0311745 A1Semiconductor Energy Laboratory Co.Ltd.
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film4,076US 7,061,014 B2Japan Science and Technology Agency · 2006
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device4,046US 7,297,977 B2Hewlett-Packard Development Company, L. P. · 2007
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004