H10D 30/601
Having lightly-doped drain or source extensions
Official title: {having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs (lightly doped source or drain extensions for TFTs H10D30/6715)}
H10D30/601 (Having lightly-doped drain or source extensions) appears on 9,394 US grants and 9,951 published applications in this corpus.
Search patents in H10D- Granted patents
- 9,394
- Published applications
- 9,951
- Assignees
- 902
- Inventors
- 10,321
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 4 | 0 |
| 1978 | 1 | 0 |
| 1979 | 4 | 0 |
| 1980 | 6 | 0 |
| 1981 | 11 | 0 |
| 1982 | 2 | 0 |
| 1983 | 4 | 0 |
| 1984 | 1 | 0 |
| 1985 | 4 | 0 |
| 1986 | 13 | 0 |
| 1987 | 6 | 0 |
| 1988 | 16 | 0 |
| 1989 | 16 | 0 |
| 1990 | 28 | 0 |
| 1991 | 34 | 0 |
| 1992 | 32 | 0 |
| 1993 | 37 | 0 |
| 1994 | 52 | 0 |
| 1995 | 64 | 0 |
| 1996 | 98 | 0 |
| 1997 | 103 | 0 |
| 1998 | 132 | 0 |
| 1999 | 158 | 0 |
| 2000 | 159 | 0 |
| 2001 | 173 | 53 |
| 2002 | 174 | 218 |
| 2003 | 211 | 200 |
| 2004 | 232 | 275 |
| 2005 | 221 | 521 |
| 2006 | 324 | 598 |
| 2007 | 324 | 542 |
| 2008 | 323 | 648 |
| 2009 | 386 | 524 |
| 2010 | 461 | 451 |
| 2011 | 429 | 490 |
| 2012 | 406 | 539 |
| 2013 | 486 | 536 |
| 2014 | 548 | 487 |
| 2015 | 520 | 537 |
| 2016 | 516 | 505 |
| 2017 | 469 | 372 |
| 2018 | 384 | 327 |
| 2019 | 344 | 300 |
| 2020 | 288 | 290 |
| 2021 | 235 | 248 |
| 2022 | 217 | 295 |
| 2023 | 210 | 294 |
| 2024 | 211 | 250 |
| 2025 | 213 | 269 |
| 2026 | 100 | 182 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Transistor structure and methods of formation6 Oct 2026US 12,757,428 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including multiple spacers and method for preparing the same6 Oct 2026US 12,757,429 B2Nanya Technology Corporation
- Manufacturing method of semiconductor structure and semiconductor structure29 Sep 2026US 12,751,069 B2Changxin Jidian (Beijing) Memory Technologies Co., Ltd.
- Method of manufacturing a semiconductor device with multi-layer gate spacers8 Sep 2026US 12,733,244 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device25 Aug 2026US 12,720,797 B2Renesas Electronics Corporation
- Doping profile for strained source/drain region8 Oct 2026US 2026/0313975 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fluorine-containing plasma treatment in semiconductor process8 Oct 2026US 2026/0314025 A1Texas Instruments Incorporated
- Semiconductor device including additional gate insulation pattern1 Oct 2026US 2026/0304822 A1Samsung Electronics Co., Ltd.
- Transistor device having a gate setback from a gate dielectric1 Oct 2026US 2026/0304870 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Double-gate mos transistor and manufacturing method24 Sep 2026US 2026/0293266 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Active programmable electronic devices for molecular biological analysis and diagnostics1,006US 5,605,662 ANanogen, Inc. · 1997
- Method for forming a film and method for manufacturing a thin film transistor649US 5,480,818 AFujitsu Limited · 1996
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Integrated circuit and method for its manufacture597US 6,972,478 B1Advanced Micro Devices, Inc. · 2005
- Method for forming a thin, high quality buffer layer in a field effect transistor and related structure553US 7,071,051 B1Advanced Micro Devices, Inc. · 2006