Method of manufacturing a substrate using an SiGe layer

A method of manufacturing a substrate comprising:

• forming a laminated layer including a layer containing silicon and oxygen and an SiGe layer, the layer containing silicon and oxygen being located between a base substrate and the SiGe layer;
• oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer;
• removing the silicon oxide layer on the SiGe layer after the oxidizing to expose a surface of the SiGe layer;
• and forming a semiconductor layer on the exposed surface of the SiGe layer.

A method of manufacturing a substrate comprising:

• forming a laminated layer including a layer containing a silicon and oxygen and an SiGe layer, the layer containing silicon and oxygen being located between a base substrate and the SiGe layer;
• oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer;
• and
• forming a semiconductor layer on the SiGe layer after oxidizing the semiconductor layer including a Ge layer or an SiGe layer showing a Ge concentration higher than the SiGe layer after oxidizing.

A method of manufacturing a substrate comprising:

• forming a laminated layer including a layer containing silicon and oxygen and an SiGe layer, the layer containing silicon and oxygen being located between a base substrate and the SiGe layer;
• oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer;
• and
• forming a semiconductor layer on the SiGe layer after the oxidizing, the semiconductor layer including a strained crystal Si layer.