H10D 30/603
Having asymmetry in the channel direction
Official title: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]}
H10D30/603 (Having asymmetry in the channel direction) appears on 3,719 US grants and 3,826 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,719
- Published applications
- 3,826
- Assignees
- 551
- Inventors
- 4,443
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 3 | 0 |
| 1980 | 4 | 0 |
| 1981 | 8 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 9 | 0 |
| 1987 | 3 | 0 |
| 1988 | 5 | 0 |
| 1989 | 8 | 0 |
| 1990 | 11 | 0 |
| 1991 | 9 | 0 |
| 1992 | 14 | 0 |
| 1993 | 15 | 0 |
| 1994 | 28 | 0 |
| 1995 | 26 | 0 |
| 1996 | 43 | 0 |
| 1997 | 43 | 0 |
| 1998 | 54 | 0 |
| 1999 | 70 | 0 |
| 2000 | 69 | 0 |
| 2001 | 63 | 26 |
| 2002 | 67 | 102 |
| 2003 | 93 | 88 |
| 2004 | 104 | 80 |
| 2005 | 70 | 137 |
| 2006 | 98 | 144 |
| 2007 | 87 | 114 |
| 2008 | 81 | 166 |
| 2009 | 104 | 121 |
| 2010 | 110 | 158 |
| 2011 | 124 | 166 |
| 2012 | 152 | 163 |
| 2013 | 160 | 199 |
| 2014 | 208 | 226 |
| 2015 | 230 | 231 |
| 2016 | 218 | 219 |
| 2017 | 224 | 187 |
| 2018 | 178 | 163 |
| 2019 | 167 | 155 |
| 2020 | 145 | 148 |
| 2021 | 123 | 123 |
| 2022 | 123 | 157 |
| 2023 | 98 | 142 |
| 2024 | 90 | 141 |
| 2025 | 115 | 162 |
| 2026 | 55 | 108 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Power MOSFET369US 5,438,215 ASiemens Aktiengesellschaft · 1995
- Complementary, isolated DMOS IC technology319US 5,156,989 ASiliconix Incorporated · 1992
- Field effect-controlled semiconductor component273US 6,184,555 B2Siemens Aktiengesellschaft · 2001
- High-voltage transistor with multi-layer conduction region222US 6,207,994 B1Power Integrations, Inc. · 2001
- Area efficient high voltage Mosfets with vertical resurf drift regions203US 5,539,238 ATexas Instruments Incorporated · 1996