Wide bandgap transistor layout with unequal gate electrode finger widths
AssigneeSkyworks Solutions, Inc.
InventorGuillaume Alexandre Blin
Life of this patent
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Abstract
A transistor comprising a first drain region, a first source region disposed on a first side of the first drain region, a first active region being formed between the first drain region and the first source region, a second source region disposed on a second side of the first drain region opposite the first side, a second active region being formed between the first drain region and the second source region, the first active region having a different width than the second active region, a first gate electrode finger disposed over the first active region, and a second gate electrode finger disposed over the second active region.
Claims20
A transistor comprising:
- a first drain region;
- a first source region of the transistor disposed on a first side of the first drain region of the transistor, a first active region of the transistor being formed between the first drain region of the transistor and the first source region of the transistor;
- a second source region of the transistor disposed on a second side of the first drain region of the transistor opposite the first side, a second active region of the transistor being formed between the first drain region of the transistor and the second source region of the transistor, the first active region of the transistor having a different width than the second active region of the transistor;
- a first gate electrode finger of the transistor disposed over the first active region of the transistor;
- and
- a second gate electrode finger of the transistor disposed over the second active region of the transistor.
Dependencies are inferred from the claim text.