Semiconductor device

Abstract

A semiconductor device is provided. The semiconductor device includes a gate structure and a plurality of doped regions. The gate structure includes a gate conductive layer and a gate dielectric layer. The gate conductive layer is located over the substrate. The gate dielectric layer is located between the gate conductive layer and the substrate. The gate dielectric layer includes a body part and a first hump part. The body part is located on the flat surface of the substrate. The first hump part is located on a portion of the flat surface at a first edge of the body part. The thickness of the first hump is greater than the thickness of the body part. The plurality of doped regions are located in the substrate at two sides of the gate structure.

Dependencies are inferred from the claim text.