Semiconductor structure and method of manufacturing the same

A method for manufacturing a semiconductor structure, comprising:

• providing a semiconductor substrate with an epitaxial layer overlying the semiconductor substrate;
• implanting a first selected area of the epitaxial layer with dopants with a first conductivity type to form a first well region and implanting a second selected area of the epitaxial layer with dopants with a second conductivity type to form a second well region, wherein the first well region and the second well region are adjacent to each other;
• forming a spacing structure on the second well region, wherein the spacing structure comprises an insulating material;
• forming a gate structure partially on the first well region and the second well region and partially on the spacing structure;
• and
• forming a source area in a top region of the first well region exposed from the gate structure and forming a drain area in a top region of the second well region exposed from the spacing structure wherein a bottom of the spacing structure is substantially coplanar with a top of the first well region and a top of the second well region.

A semiconductor structure, comprising:

• a well structure formed on a semiconductor substrate and comprising a first well region of a first conductivity type and a second well region of a second conductivity type opposite to the first conductivity type;
• a spacing structure formed on the second well region and comprising an insulating material;
• a gate structure partially formed on the well region and partially formed on the spacing structure;
• and
• a metal field plate formed above the spacing structure and connecting the gate structure, wherein the metal field plate comprises a conductive material.