Double-gate mos transistor and manufacturing method

A method of manufacturing a MOSFET transistor, the method comprising:

• forming a first region of a gate structure, the first region being insulated from and above an active area of a semiconductor substrate extending along a plane, the first region having a first length in a first direction of the plane;
• forming a second region of the gate structure, the second region being insulated from and above the first region, the second region having a second length in the first direction greater than the first length, and the second region further extending on either side of the first region in the first direction, the second region being formed so that a first longitudinal edge of the second region reaches or extends beyond a second longitudinal edge of the first region along a second direction of the plane perpendicular to the first direction, and the forming of the second region comprising forming an opening in the second direction from a third longitudinal edge of the second region opposite to the first longitudinal edge;
• and
• forming a drain region and a source region on either side of the second region in the first direction.

An electronic circuit comprising:

• a semiconductor substrate extending along a plane;
• and
• at least one MOSFET transistor comprising:
• a drain region and a source region located in an active area of the semiconductor substrate along a first direction of the plane;
• and
• a gate structure comprising
• a first region insulated from, and located at least partly above, the active area, and
• a second region insulated from, and located above, the first region;
• the first region having a first length in the first direction, the second region having a second length in the first direction greater than the first length, and the second region further extending on either side of the first region in the first direction;
• along a second direction of the plane perpendicular to the first direction, the second region having a first longitudinal edge that reaches or extends beyond a second longitudinal edge of the first region;
• and
• the second region having an opening that extends in the second direction from a third longitudinal edge of the second region opposite to the first longitudinal edge.