H10D 30/605
Having significant overlap between the lightly-doped extensions and the gate electrode
Official title: {having significant overlap between the lightly-doped extensions and the gate electrode}
H10D30/605 (Having significant overlap between the lightly-doped extensions and the gate electrode) appears on 804 US grants and 662 published applications in this corpus.
Search patents in H10D- Granted patents
- 804
- Published applications
- 662
- Assignees
- 225
- Inventors
- 1,311
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 8 | 0 |
| 1989 | 5 | 0 |
| 1990 | 14 | 0 |
| 1991 | 14 | 0 |
| 1992 | 21 | 0 |
| 1993 | 17 | 0 |
| 1994 | 18 | 0 |
| 1995 | 13 | 0 |
| 1996 | 25 | 0 |
| 1997 | 20 | 0 |
| 1998 | 22 | 0 |
| 1999 | 18 | 0 |
| 2000 | 12 | 0 |
| 2001 | 14 | 4 |
| 2002 | 12 | 14 |
| 2003 | 16 | 10 |
| 2004 | 15 | 22 |
| 2005 | 17 | 21 |
| 2006 | 20 | 27 |
| 2007 | 14 | 16 |
| 2008 | 14 | 23 |
| 2009 | 10 | 20 |
| 2010 | 10 | 23 |
| 2011 | 18 | 29 |
| 2012 | 15 | 13 |
| 2013 | 20 | 35 |
| 2014 | 30 | 25 |
| 2015 | 37 | 41 |
| 2016 | 40 | 44 |
| 2017 | 46 | 48 |
| 2018 | 29 | 19 |
| 2019 | 20 | 23 |
| 2020 | 33 | 31 |
| 2021 | 20 | 21 |
| 2022 | 32 | 45 |
| 2023 | 20 | 32 |
| 2024 | 26 | 34 |
| 2025 | 38 | 27 |
| 2026 | 13 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process30 Jun 2026US 12,672,319 B2Sony Group Corporation
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- Double-gate mos transistor and manufacturing method24 Sep 2026US 2026/0293266 A1STMicroelectronics International N. V.
- Semiconductor device and method for fabricating the same17 Sep 2026US 2026/0282468 A1United Microelectronics Corp.
- Semiconductor device and method for fabricating the same17 Sep 2026US 2026/0282469 A1United Microelectronics Corp.
- Semiconductor device17 Sep 2026US 2026/0282497 A1United Microelectronics Corp.
- High voltage finfet semiconductor devices10 Sep 2026US 2026/0271385 A1Micron Technology, Inc.
Most cited
By later US patents
- Graded high germanium compound films for strained semiconductor devices429US 7,902,009 B2Intel Corporation · 2011
- Fermi threshold silicon-on-insulator field effect transistor198US 5,151,759 AThunderbird Technologies, Inc. · 1992
- Self-aligned overlap MOSFET and method of fabrication142US 5,091,763 AIntel Corporation · 1992
- Forming steep lateral doping distribution at source/drain junctions142US 6,268,640 B1International Business Machines Corporation · 2001
- Field effect transistor with a lightly doped drain120US 5,349,225 ATexas Instruments Incorporated · 1994