High voltage finfet semiconductor devices

An integrated high-voltage switch, comprising:

• a high-voltage p-type fin field effect transistor (HVP finFET), a high-voltage depletion fin field effect transistor (HVD finFET), and an active area extending across both the HVP finFET and the HVD finFET,
• wherein the HVP finFET includes—
• a first plurality of fin trenches formed in the active area,
• a first plurality of fins defined at least in part by the first plurality of fin trenches, wherein a fin of the first plurality of fins is at least partially positioned within a channel of the HVP finFET;
• and
• a first gate extending across the first plurality of fins, wherein the first gate includes at least two first gate fins that are each at least partially positioned within a corresponding one of the first plurality of fin trenches;
• and
• wherein the HVD finFET includes—
• a second plurality of fin trenches formed in the active area;
• a second plurality of fins defined at least in part by the second plurality of fin trenches, wherein a fin of the second plurality of fins is at least partially positioned within a channel of the HVD finFET;
• and
• a second gate extending across the second plurality of fins, wherein the second gate includes at least two second gate fins that are each at least partially positioned within a corresponding one of the second plurality of fin trenches.