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US 12,660,234 B2Granted
Device with workfunction metal in drift region
AssigneeGlobalFoundries U.S. Inc.
InventorsShesh Mani Pandey, Rajendran Krishnasamy, Chung Foong Tan
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a device with workfunction metal in a drift region and methods of manufacture. The structure includes: a gate structure having at least a first workfunction metal in a channel region and a second workfunction metal, which is different from the first workfunction metal, in a trench in a drift region; and a sidewall spacer adjacent to the gate structure within the trench in the drift region.
Claims19
A structure comprising:
- a gate structure comprising at least a first workfunction metal in a channel region, a second workfunction metal in a trench in a drift region, and a gate electrode in the channel region above the first workfunction metal and in the trench above the second workfunction metal, wherein the second work function metal is a different workfunction metal from the first workfunction metal, wherein the gate electrode is a same gate material above the first workfunction metal and the second workfunction metal;
- and
- a sidewall spacer adjacent to the gate structure within the trench in the drift region,
- wherein the sidewall spacer is directly in contact with a top surface of an N-well in a semiconductor substrate and is directly in contact with a sidewall of a drain region.
1 more element
A structure comprising:
- a drift region within semiconductor substrate;
- a trench in the drift region;
- a gate structure comprising a first workfunction metal in a channel region outside of the trench, a second workfunction metal in the trench in the drift region, and a gate electrode in the channel region above the first workfunction metal and in the trench above the second workfunction metal, wherein the second work function metal is a different workfunction metal from the first workfunction metal, wherein the gate electrode is a same gate material above the first workfunction metal and the second workfunction metal;
- and
- a sidewall spacer in the drift region between the second workfunction metal of the gate structure and a drain region,
- wherein the sidewall spacer is directly in contact with a top surface of an N-well and is directly in contact with a sidewall of the drain region.
3 more elements
A method comprising:
- forming a drift region within a semiconductor substrate;
- forming a trench within the drift region;
- forming a gate structure partly within the trench and partly outside of the trench, the gate structure comprising a channel region of a first workfunction metal, a second workfunction metal formed within the trench in the drift region, and a gate electrode in the channel region above the first workfunction metal and in the trench above the second workfunction metal,
- wherein the second workfunction metal is a different workfunction metal from the first workfunction metal,
- wherein the gate electrode is a same gate material above the first workfunction metal and the second workfunction metal;
- and
- forming a sidewall spacer adjacent to the gate structure in the drift region,
- wherein the sidewall spacer is directly in contact with a top surface of an N-well in the semiconductor substrate and is directly in contact with a sidewall of a drain region.
5 more elements
Dependencies are inferred from the claim text.