Forming steep lateral doping distribution at source/drain junctions
AssigneeInternational Business Machines Corporation
InventorsHeemyong Park, Yuan Taur, Hsing-Jen C. Wann
Life of this patent
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Abstract
A semiconductor device is fabricated by implanting into a semiconductor substrate non-doping ions at a tilt angle of at least about 10° to laterally extend preamorphization of the substrate portion and then implanting into the substrate dopants for providing source/drain extensions or halo doping or both.
Claims29
A method for fabricating a semiconductor device which comprises providing a structure having a semiconductor substrate, gate insulating layer above selected portions of the semiconductor substrate, gate conductor located above the gate insulating layer;
- implanting into the substrate non-doping ions at a tilt angle α of at least about 10° and at least at a dosage of at least about 1E14 cm−2, at an energy of about 10 keV, and wherein edges of the gate conductor act as a self-aligned mask for implanting the non-doping ions;
- and then implanting into the substrate dopants for providing source/drain extensions or halo doping or both.
A semiconductor device which comprises a structure having a semiconductor substrate, gate insulating layer located above selected portions of the semiconductor substrate, gate conductor located above the gate insulating layer, wherein the substrate includes non-doping ions having been implanted at a tilt angle α of at least about 10° and at a dosage of at least about 1E14 cm−2 at an energy of at least about 10 keV and wherein the substrate further includes dopants for providing source/drain extensions or halo doping or both.
A method for fabricating a semiconductor device which consists essentially of providing a structure having a semiconductor substrate, gate insulating layer above selected portions of the semiconductor substrate, gate conductor located above the gate insulating layer;
- implanting into the substrate non-doping ions at a tilt angle α of at least about 10° and at a dosage of at least about 1E14 cm−2, at an energy of at least about 10 keV, and wherein edges of the gate conductor act as a self-aligned mask for implanting the non-doping ions;
- and then implanting into the substrate dopants for providing source/drain extensions or halo doping or both.
Dependencies are inferred from the claim text.