Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsGuang-Yu Lo, Chun-Tsen Lu, Chung-Fu Chang, Chih-Shan Wu, Yu-Hsiang Lin, Wei-Hao Chang
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Abstract
A method for fabricating a semiconductor device includes the steps of forming a fin-shaped structure on a substrate, forming a first trench and a second trench in the fin-shaped structure, forming a first dielectric layer in the first trench and the second trench, removing part of the first dielectric layer, forming a second dielectric layer in the first trench and the second trench to form a first single diffusion break (SDB) structure and a second SDB structure, and then forming a gate structure on the fin-shaped structure, the first SDB structure, and the second SDB structure.
Claims9
A semiconductor device, comprising:
- a fin-shaped structure on a substrate;
- a first single diffusion break (SDB) structure and a second SDB structure in the substrate, wherein each of the first SDB structure and the second SDB structure comprises a bottom portion and a top portion, the bottom portion and the top portion comprise different materials, and sidewalls of the top portion and the bottom portion are aligned;
- and
- a gate structure on the fin-shaped structure, the first SDB structure, and the second SDB structure.
Dependencies are inferred from the claim text.